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1

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process

A Pérez-Tomás, X Jordà, P Godignon, J.L Gálvez, M Vellvehı́, J Millán

Journal:

Microelectronics Journal

Year:

2004

Language:

english

File:

PDF, 448 KB

english, 2004

2

Analysis of the breakdown voltage in SOI and SOS technologies

J Roig, M Vellvehi, D Flores, J Rebollo, J Millan, S Krishnan, M.M De Souza, E.M Sankara Narayanan

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 252 KB

english, 2002

3

Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities

Perpiñà, X., Jordà, X., Vellvehi, M., Vobecky, J., Mestres, N.

Journal:

Journal of The Electrochemical Society

Year:

2010

Language:

english

File:

PDF, 1.04 MB

english, 2010

4

Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K

M. Vellvehi, X. Jordà, D. Flores, P. Godignon, J. Rebollo, J. Millán

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 203 KB

english, 1999

5

Mapping of 6H-SiC for implantation control

Morvan, E, Godignon, P, Montserrat, J, Flores, D, Jorda, X, Vellvehi, M

Journal:

Diamond and Related Materials

Year:

1999

Language:

english

File:

PDF, 597 KB

english, 1999

6

[IEEE 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (8-12 July 2002)] Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) - Degradation behaviour of polysilicon high voltage thin film transistors

Mugnier, M., Manhas, S.K., Chandra Sekhar, D., Krishnan, S., Cross, R., Sankara Narayanan, E.M., De Souza, M.M., Flores, D., Vellvehi, M., Millan, J.

Year:

2002

Language:

english

File:

PDF, 331 KB

english, 2002

7

Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal

Pérez, R., Mestres, Narcis, Tournier, Dominique, Jordà, Xavier, Godignon, Phillippe, Vellvehi, Miquel

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 263 KB

english, 2005

8

P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

Fernandez, M., Perpina, X., Roig, J., Vellvehi, M., Bauwens, F., Jorda, X., Tack, M.

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 1.04 MB

english, 2017

9

[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Short-circuit capability in p-GaN HEMTs and GaN MISHEMTs

Fernandez, M., Perpina, X., Vellvehi, M., Jorda, X., Roig, J., Bauwens, F., Tack, M.

Year:

2017

File:

PDF, 952 KB

2017

10

Coupled electro-thermal simulation of a DC/DC converter

Miquel Vellvehi, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 1.33 MB

english, 2007

11

Design and optimisation of suitable edge terminations for 6.5 kV IGBTs

M Vellvehi, D Flores, X Jordà, S Hidalgo, J Rebollo, L Coulbeck, P Waind, D Newcombe

Journal:

Microelectronics Journal

Year:

2002

Language:

english

File:

PDF, 301 KB

english, 2002

12

Reduction of self-heating effect on SOIM devices

J Roig, D Flores, M Vellvehi, J Rebollo, J Millan

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 259 KB

english, 2002

13

Study of novel techniques for reducing self-heating effects in SOI power LDMOS

J Roig, D Flores, S Hidalgo, M Vellvehi, J Rebollo, J Millán

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 639 KB

english, 2002

14

A new lateral IGBT for high temperature operation

M Vellvehi, P Godignon, D Flores, J Fernández, S Hidalgo, J Rebollo, J Millán

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 825 KB

english, 1997

15

Lateral spread of implanted ion distributions in 6HSiC: simulation

E. Morvan, N. Mestres, J. Pascual, D. Flores, M. Vellvehi, J. Rebollo

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 240 KB

english, 1999

16

Dynamic latch-up in advanced LIGBT structures at high operating temperatures

M Vellvehi, X Jordà, D Flores, E Morvan, P Godignon, J Rebollo, J Millán

Journal:

Materials Science and Engineering: B

Year:

2000

Language:

english

File:

PDF, 312 KB

english, 2000

17

Electronic stopping power for Monte Carlo simulation of ion implantation into SiC

E. Morvan, P. Godignon, S. Berberich, M. Vellvehi, J. Millán

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1999

Language:

english

File:

PDF, 308 KB

english, 1999

18

Design for reliability of solid state lighting systems

X. Perpiñà, R. Werkhoven, J. Jakovenko, J. Formánek, M. Vellvehi, X. Jordà, J. Kunen, P. Bancken, P.J. Bolt

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 1.46 MB

english, 2012

19

Thermal cycling analysis of high temperature die-attach materials

L.A. Navarro, X. Perpiñà, M. Vellvehi, V. Banu, X. Jordà

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 1.09 MB

english, 2012

20

Hot spot analysis in integrated circuit substrates by laser mirage effect

PerpinÌaÌ, X., JordaÌ, X., Vellvehi, M., Altet, J.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 472 KB

english, 2011

21

Thermal resistance investigations on new leadframe-based LED packages and boards

Pardo, B., Gasse, A., Fargeix, A., Jakovenko, J., Werkhoven, R.J., Perpiñà, X., Jordà, X., Vellvehi, M., Van Weelden, T., Bancken, P.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 2.44 MB

english, 2013

22

Design methodologies for reliability of SSL LED boards

Jakovenko, J., Formánek, J., Perpiñà, X., Jorda, X., Vellvehi, M., Werkhoven, R.J., Husák, M., Kunen, J.M.G., Bancken, P., Bolt, P.J., Gasse, A.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 2.43 MB

english, 2013

23

Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors

Altet, Josep, Gomez, Dídac, Perpinyà, Xavier, Mateo, Diego, González, José Luis, Vellvehi, Miquel, Jordà, Xavier

Journal:

Sensors and Actuators A: Physical

Year:

2013

Language:

english

File:

PDF, 1.73 MB

english, 2013

24

Thermal Analysis of LED Lamps for Optimal Driver Integration

Perpina, Xavier, Werkhoven, Robert J., Vellvehi, Miquel, Jakovenko, Jiri, Jorda, Xavier, Kunen, Jos M. G., Bancken, Peter, Bolt, Pieter J.

Journal:

IEEE Transactions on Power Electronics

Year:

2015

Language:

english

File:

PDF, 1.81 MB

english, 2015

25

Accelerated Life Test for SiC Schottky Blocking Diodes in High-Temperature Environment

Maset, E., Sanchis-Kilders, E., Ejea, J.B., Ferreres, A., Jordan, J., Esteve, V., Brosselard, P., Jorda, X., Vellvehi, M., Godignon, P.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2009

Language:

english

File:

PDF, 701 KB

english, 2009

26

[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

Brosselard, P., Tomas, A. Perez., Camara, N., Hassan, J., Jorda, X., Vellvehi, M., Godignon, P., Millan, J., Bergman, J. P.

Year:

2008

Language:

english

File:

PDF, 311 KB

english, 2008

27

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Navarro, Luis A., Perpina, Xavier, Godignon, Philippe, Montserrat, Josep, Banu, Viorel, Vellvehi, Miquel, Jorda, Xavier

Journal:

IEEE Transactions on Power Electronics

Year:

2014

Language:

english

File:

PDF, 898 KB

english, 2014

28

Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications

Perpiñà, X., Jordà, X., León, J., Vellvehi, M., Antón, D., Llorente, S.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 2.84 MB

english, 2014

29

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

León, J., Perpiñà, X., Banu, V., Montserrat, J., Berthou, M., Vellvehi, M., Godignon, P., Jordà, X.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 1.68 MB

english, 2014

30

[IEEE 19th International Symposium on Power Semiconductor Devices and IC's - Jeju, Korea (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

Brosselard, P., Jorda, X., Vellvehi, M., Godignon, P., Millan, J., Bergman, J.P., Lambert, B.

Year:

2007

Language:

english

File:

PDF, 2.59 MB

english, 2007

31

Channeling implantations of Al[sup +] into 6H silicon carbide

Morvan, E., Godignon, P., Vellvehi, M., Hallén, A., Linnarsson, M., Kuznetsov, A. Yu.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 337 KB

english, 1999

32

[IEEE 2004 24th International Conference on Microelectronics - Nis, Serbia (16-19 May 2004)] 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) - Modellization of the breakdown voltage of four-layer punch-through TVS diodes

Urresti, J., Hidalgo, S., Flores, D., Roig, J., Vellvehi, M., Rebollo, J.

Year:

2004

Language:

english

File:

PDF, 237 KB

english, 2004

33

Standard and Shorted Anode Non-Punch-Through Emitter Switched Thyristors

Flores, D., Godignon, P., Vellvehi, M., Fernández, J., Hidalgo, S., Rebollo, J., Millan, J.

Journal:

Year:

1997

Language:

english

File:

PDF, 778 KB

english, 1997

34

Short-Circuit Study in Medium Voltage GaN Cascodes, p-GaN HEMTs and GaN MISHEMTs

Fernandez, Manuel, Perpinya, Xavier, Roig-Guitart, Jaume, Vellvehi, Miquel, Bauwens, Filip, Tack, Marnix, Jorda, Xavier

Journal:

IEEE Transactions on Industrial Electronics

Year:

2017

Language:

english

File:

PDF, 1.93 MB

english, 2017

35

[IEEE 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw (2017.9.11-2017.9.14)] 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Analysis of solid state relay solutions based on different semiconductor technologies

Fernandez, M., Perpina, X., Vellvehi, M., Jorda, X., Cabeza, T., Llorente, S.

Year:

2017

Language:

english

File:

PDF, 518 KB

english, 2017

36

Solid State Relay Solutions for Induction Cooking Applications based on Advanced Power Semiconductor Devices

Fernandez, Manuel, Perpinya, Xavier, Rebollo, Jose, Vellvehi, Miquel, Sanchez, David, Cabeza, Tomas, Llorente, Sergio, Jorda, Xavier

Journal:

IEEE Transactions on Industrial Electronics

Year:

2018

Language:

english

File:

PDF, 2.18 MB

english, 2018

37

Numerical simulation of the insulated base MOS-controlled thyristor

D. Flores, P. Godignon, M. Vellvehí, J. Fernández, S. Hidalgo, J. Rebollo, J. Millán

Journal:

Microelectronics Journal

Year:

1996

Language:

english

File:

PDF, 262 KB

english, 1996

38

Self-heating experimental study of 600 V PT-IGBTs under low dissipation energies

X. Perpiñà, X. Jordà, N. Mestres, M. Vellvehi, P. Godignon, J. Millán

Journal:

Microelectronics Journal

Year:

2004

Language:

english

File:

PDF, 281 KB

english, 2004

39

Innovative packaging solution for power and thermal management of wide-bandgap semiconductor devices in space applications

J. Barcena, J. Maudes, M. Vellvehi, X. Jorda, I. Obieta, C. Guraya, L. Bilbao, C. Jiménez, C. Merveille, J. Coleto

Journal:

Acta Astronautica

Year:

2008

Language:

english

File:

PDF, 1.63 MB

english, 2008

40

Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes

X. Jordà, X. Perpiñà, M. Vellvehi, F. Madrid, D. Flores, S. Hidalgo, J. Millán

Journal:

Applied Thermal Engineering

Year:

2011

Language:

english

File:

PDF, 1.39 MB

english, 2011

41

Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafers

M. Vellvehi, J.L. Gálvez, X. Perpiñà, X. Jordà, P. Godignon, J. Millán

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 878 KB

english, 2010

42

SiC power DIMOS with double implanted Al/B P-well

P Godignon, E Morvan, X Jordá, M Vellvehi, D Flores, J Rebollo

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 159 KB

english, 2001

43

Design considerations for 6.5 kV IGBT devices

M. Vellvehı́, D. Flores, X. Jordà, S. Hidalgo, J. Rebollo, L. Coulbeck, P. Waind

Journal:

Microelectronics Journal

Year:

2004

Language:

english

File:

PDF, 535 KB

english, 2004

44

Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor

D Flores, P Godignon, X Jordà, M Vellvehi, J Fernández, J Millán

Journal:

Microelectronics Journal

Year:

1999

Language:

english

File:

PDF, 354 KB

english, 1999

45

Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures

M. Vellvehı́, X. Jordà, P. Godignon, D. Flores, S. Hidalgo, J. Rebollo

Journal:

Microelectronics Journal

Year:

1999

Language:

english

File:

PDF, 916 KB

english, 1999

46

Cryogenic operation of emitter switched thyristor structures

D. Flores, X. Jordà, M. Vellvehı́, J. Rebollo, J. Millán

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 420 KB

english, 1999

47

Study of recoil implantation technique for deep low doped junction formation with aluminum

P Godignon, E Morvan, J Montserrat, X Jordá, M Vellvehi, S Hidalgo, J Rebollo

Journal:

Microelectronic Engineering

Year:

1998

Language:

english

File:

PDF, 372 KB

english, 1998

48

Radial confinement in lateral power devices

S Krishnan, M.M De Souza, E.M.S Narayanan, M Vellvehi, J Roig, D Flores, J Rebollo, J Millan

Journal:

Microelectronics Journal

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

49

The switching behaviour of the shorted anode base resistance MOS-controlled thyristor

D. Flores, X. Jordá, M. Vellvehi, J. Fernández, S. Hidalgo, J. Rebollo, J. Millán

Journal:

Microelectronics Journal

Year:

1998

Language:

english

File:

PDF, 334 KB

english, 1998

50

[IEEE 2012 13th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) - Cascais, Portugal (2012.04.16-2012.04.18)] 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - LED driver thermal design considerations for solid-state lighting technologies

Perpina, X., Werkhoven, R.J., Vellvehi, M., Jorda, X., Kunen, J.M.G., Jakovenko, J., Bancken, P., Bolt, P.J.

Year:

2012

Language:

english

File:

PDF, 1.86 MB

english, 2012

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